首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 25. 3 μ W at 60 fps 240×160 Pixel Vision Sensor for Motion Capturing With In-Pixel Nonvolatile Analog Memory Using CAAC-IGZO FET
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A 25. 3 μ W at 60 fps 240×160 Pixel Vision Sensor for Motion Capturing With In-Pixel Nonvolatile Analog Memory Using CAAC-IGZO FET

机译:一个25. 3μW,60 fps 240×160像素视觉传感器,用于使用CAAC-IGZO FET的像素内非易失性模拟存储器进行运动捕捉

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摘要

Utilizing a c-axis-aligned crystalline oxide semiconductor-based FET, we have fabricated a vision sensor with in-pixel nonvolatile analog memory. The sensor realized normal image data capturing, captured differential data of a given reference frame, and retained the captured data for an extended time in each pixel. Moreover, the sensor realized normal global shutter image capturing and motion capturing by extracting differential images. This is performed using the captured data and depends on the presence or absence of differences between normal images and reference images. The sensor has three operating modes: an imaging mode, a motion capturing mode, and a wait mode. Importantly, power consumption is reduced by powering off circuit blocks that are in a standby state.
机译:利用基于c轴排列的晶体氧化物半导体的FET,我们制造了具有像素内非易失性模拟存储器的视觉传感器。该传感器实现了正常图像数据的捕获,捕获给定参考帧的差分数据,并在每个像素中将捕获的数据保留了较长的时间。此外,该传感器通过提取差分图像实现了正常的全局快门图像捕获和运动捕获。这是使用捕获的数据执行的,并且取决于正常图像和参考图像之间是否存在差异。传感器具有三种操作模式:成像模式,运动捕捉模式和等待模式。重要的是,通过关闭处于待机状态的电路块的电源来降低功耗。

著录项

  • 来源
    《IEEE Journal of Solid-State Circuits》 |2016年第9期|2168-2179|共12页
  • 作者单位

    Semiconductor Energy Laboratory Co.Ltd, 398 Hase, Atsugi-shi, Kanagawa, Japan;

    Semiconductor Energy Laboratory Co.Ltd, 398 Hase, Atsugi-shi, Kanagawa, Japan;

    Semiconductor Energy Laboratory Co.Ltd, 398 Hase, Atsugi-shi, Kanagawa, Japan;

    Semiconductor Energy Laboratory Co.Ltd, 398 Hase, Atsugi-shi, Kanagawa, Japan;

    Semiconductor Energy Laboratory Co.Ltd, 398 Hase, Atsugi-shi, Kanagawa, Japan;

    Semiconductor Energy Laboratory Co.Ltd, 398 Hase, Atsugi-shi, Kanagawa, Japan;

    Semiconductor Energy Laboratory Co.Ltd, 398 Hase, Atsugi-shi, Kanagawa, Japan;

    Semiconductor Energy Laboratory Co.Ltd, 398 Hase, Atsugi-shi, Kanagawa, Japan;

    Semiconductor Energy Laboratory Co.Ltd, 398 Hase, Atsugi-shi, Kanagawa, Japan;

    Semiconductor Energy Laboratory Co.Ltd, 398 Hase, Atsugi-shi, Kanagawa, Japan;

    Semiconductor Energy Laboratory Co.Ltd, 398 Hase, Atsugi-shi, Kanagawa, Japan;

    Semiconductor Energy Laboratory Co.Ltd, 398 Hase, Atsugi-shi, Kanagawa, Japan;

    Department of Electrical Engineering and Information Systems, University of Tokyo, Tokyo, Japan;

    Semiconductor Energy Laboratory Co.Ltd, 398 Hase, Atsugi-shi, Kanagawa, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Field effect transistors; Radiation detectors; Nonvolatile memory; Image sensors; Silicon;

    机译:场效应晶体管;辐射探测器;非易失性存储器;图像传感器;硅;

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