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A 144-MHz Fully Integrated Resonant Regulating Rectifier With Hybrid Pulse Modulation for mm-Sized Implants

机译:具有混合脉冲调制的144MHz全集成谐振稳压整流器,用于毫米尺寸的植​​入物

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This paper presents a fully integrated resonant regulating rectifier (IR3) with an on-chip coil used to wirelessly power mm-sized implants. By combining rectification and regulation in a single stage, and controlling this stage via a hybrid pulse-width modulation and pulse-frequency modulation (PFM) feedback scheme, the IR3 avoids efficiency-limiting cascaded losses while enabling tight voltage regulation with low dropout and ripple. The IR3 is implemented in 0.078 mm2 of active area in 180-nm Silicon oxide insulator (SOI) CMOS, and achieves a 1.87% AVDD/VDD power supply regulation ratio with a 1-nF decoupling capacitor despite a tenfold load current variation from 8 to 80 μA. A 0.8-V VDD is maintained at a 8-kΩ load for 144-MHz RF inputs ranging from 0.98 to 1.5 V. At 1-V regulation, the voltage conversion efficiency is greater than 92% with less than 5.2-mVpp ripple, while the power conversion efficiency is 54%. The measured overall wireless power transfer system efficiency, from the primary coil to VDD output of the IR3, is 2% at 160-μW load, and reaches 5% at 700 μW.
机译:本文介绍了一种完全集成的谐振调节整流器(IR 3 ),该芯片带有一个片上线圈,用于为毫米大小的植入物无线供电。通过将整流和调节合并在一个阶段中,并通过混合的脉冲宽度调制和脉冲频率调制(PFM)反馈方案控制该阶段,IR 3 避免了限制效率的级联损耗,同时实现了严格的电压调节,低压差和纹波低。 IR 3 在180nm氧化硅绝缘体(SOI)CMOS的有源区域中采用0.078 mm 2 实现,并实现了1.87%的AV DD / V DD 电源调节比。对于144MHz射频输入(范围为0.98至1.5V),在8kΩ负载下维持0.8VV DD 。在1V稳压下,电压转换效率大于92%,而电压转换效率更低。纹波小于5.2 mVpp,而电源转换效率为54%。从IR 3 的初级线圈到VDD输出,测得的整个无线功率传输系统效率在160μW负载下为2%,在700μW时达到5%。

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