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A 40-GHz Mirrored-Cascode Differential Transimpedance Amplifier in 65-nm CMOS

机译:采用65nm CMOS的40GHz镜像共源共栅差分跨阻放大器

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This paper presents a fully differential transimpedance amplifier (TIA) realized in a standard 65-nm CMOS process, where a novel mirrored-cascode (MC) input configuration is proposed for differential signaling, i. e., an NMOS cascode amplifier with a resistive feedback for negative output and its MC amplifier via an ac-coupling capacitor for positive output. For bandwidth extension, the third-order asymmetric transformers were carefully employed. Measured results of the proposed MC differential (MCD) TIA demonstrate 54-dB Omega transimpedance gain, 40-GHz bandwidth for 50-fF photodiode capacitance, 19.8-pA/root Hz average noise current spectral density, +/- 10-ps group delay variation, and 55.2-mW power consumption. Eye diagrams for 32 Gb/s 215-1 pseudo random binary sequence (PRBS) were measured with the input currents of 100-1.5 mApp. The chip occupies the area of 0.6 mm2 including I/O pads.
机译:本文提出了一种在标准65 nm CMOS工艺中实现的全差分跨阻放大器(TIA),其中提出了一种新型的镜像级联(MC)输入配置用于差分信号传输,即。例如,具有电阻反馈的NMOS共源共栅放大器,用于负输出;通过交流耦合电容器的MC放大器,其MC放大器,用于正输出。为了扩展带宽,精心使用了三阶不对称变压器。拟议的MC差分(MCD)TIA的测量结果表明,具有54dB的Omega跨阻增益,50fF的光电二极管电容的40GHz带宽,19.8pA / root Hz的平均噪声电流频谱密度,+ /-10ps的群延迟变化和55.2 mW的功耗。在100-1.5 mApp的输入电流下测量了32 Gb / s 215-1伪随机二进制序列(PRBS)的眼图。包括I / O焊盘在内的芯片面积为0.6 mm2。

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