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Demonstration of Integrated Micro-Electro-Mechanical Relay Circuits for VLSI Applications

机译:用于VLSI应用的集成微机电继电器电路的演示

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摘要

This work presents measured results from test chips containing circuits implemented with micro-electro-mechanical (MEM) relays. The relay circuits designed on these test chips illustrate a range of important functions necessary for the implementation of integrated VLSI systems and lend insight into circuit design techniques optimized for the physical properties of these devices. To explore these techniques a hybrid electro-mechanical model of the relays' electrical and mechanical characteristics has been developed, correlated to measurements, and then also applied to predict MEM relay performance if the technology were scaled to a 90 nm technology node. A theoretical, scaled, 32-bit MEM relay-based adder, with a single-bit functionality demonstrated by the measured circuits, is found to offer a factor of ten energy efficiency gain over an optimized CMOS adder for sub-20 MOPS throughputs at a moderate increase in area.
机译:这项工作展示了包含由微机电(MEM)继电器实现的电路的测试芯片的测量结果。这些测试芯片上设计的继电器电路说明了实现集成VLSI系统所需的一系列重要功能,并深入了解了针对这些设备的物理特性而优化的电路设计技术。为了探索这些技术,已经开发了继电器电气和机械特性的混合机电模型,并将其与测量值相关联,如果将技术扩展到90 nm技术节点,还可以将其用于预测MEM继电器性能。理论上可扩展的,基于32位MEM继电器的加法器,具有实测电路演示的单位功能,相对于针对20个以下MOPS吞吐量的优化CMOS加法器,其能效提高了十倍。面积适度增加。

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