Temperature dependence of Cu_2ZnSn(Se_xS_(1-x))_4 monograin solar cells

摘要

The temperature dependence of open-circuit voltage (V_(oc)), short-circuit current (I_(sc)), fill factor (FF), and relative efficiency of mono-grain Cu_2ZnSn(Se_xS_(1-x))_4 solar cell was measured. The light intensity was varied from 2.2 to 100 mW/cm~2 and temperatures were in the range of T= 175-300 K. With a light intensity of 100mW/cm~2 dV_(oc)/dT was determined to be -1.91 mV/K and the dominating recombination process at temperatures close to room temperature was found to be related to the recombination in the space-charge region. The solar cell relative efficiency decreases with temperature by 0.013%/K. Our results show that the diode ideality factor n does not show remarkable temperature dependence and slightly increases from n= 1.85 to n - 2.05 in the temperature range between 175 and 300 K.