Determination of the diode parameters of a-Si and CdTe solar modules using variation of the intensity of illumination: An application

摘要

An attempt has been made for the determination of diode parameters viz. shunt resistance R&, series resistance Rs, diode ideality factor n and reverse saturation current density Jo of three solar modules: a-Si 47-37, a-Si 51-13 and CdTe 14407. In this regard, two approaches namely (A) and (B) reported by Khan et al. (2010) have been used to determine all the four diode parameters Rsh, Rs, n and Jo- The data of slopes of J-Vcurve at open circuit conditions (moc) and open circuit voltage (Voc) at different illumination intensities obtained by Del Cueto (1998) for two a-Si and one CdTe solar modules have been used to determine the above diode parameters. The determined values of diode parameters have been used to generate the theoretical J-V curves. The theoretical fill factor (FF) and Foc have been calculated from the theoretical J— V curves and are plotted along with the experimental FF and Voc values. The theoretical values of FF and Voc obtained by the approach (B) of method of Khan et al. (2010) are in good agreement with the experimental values.