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Cu_(1-x)In_xSe_2 thin films: Deposition by spray pyrolysis and characteristics

机译:Cu_(1-x)In_xSe_2薄膜:喷雾热解沉积及特性

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摘要

Deposition of copper indium selenide (Cu_(1-x)In_xSe_2 (0 ≤ x ≤ 1)) thin films onto the spectroscopic grade amorphous glass substrates was carried out by a chemical spray deposition technique. The deposition parameters, viz. temperature (400 ℃), time (8 min), solution spray rate (5 ml/min), nozzle to substrate distance (30 cm), air pressure (1.2kg/m~2), etc. were optimized so as to obtain good quality samples. The chemical composition and structure of these as-deposited films were determined by the EDS and XRD analyses techniques. The films are nonstoichiometric. Copper and indium contents in the films vary in proportion with the x and 1 -x values. Selenium content in the films (for low In-concentration) was less than that of the expected (50%) whereas it exceeds 50% for higher In-concentration in the films. The crystal structure of these films as-revealed by an X-ray diffraction technique showed that the deposits are composites of the CuSe_2, CuInSe_2, and In_2Se_3 phases. The observed data have fair match with the JCPD data. The optical studies conducted in the range of wavelengths between 300 nm and 1300 nm showed absorption coefficient of the order of 10~4-10~5 cm~(-1) and the transitions to be of the direct type. The energy band gap decreased continuously from 2.10 eV to 1.15 eV as x was varied from 0 to 1. The surface morphology revealed a web of needle like long and tapered at one end, randomly oriented crystallites. Some globule like overgrowth has also been observed. The electrical conductivity studies showed that the films are semiconducting in nature and conductivity is found to be increased with increasing In-content up to x = 0.4 and decreased thereafter. A highest electrical conductivity of 1.1 x 10~(-4) (Ω cm) has been observed for the films with x = 0.4. The activation energies of an electrical conduction were then determined for these samples. Thermo power measurements showed same trend of variations analogous to the electrical conductivity and the samples exhibit n as well as p-type conduction.
机译:通过化学喷雾沉积技术将铜铟硒化物(Cu_(1-x)In_xSe_2(0≤x≤1))薄膜沉积到光谱级非晶玻璃基板上。沉积参数,即。优化温度(400℃),时间(8分钟),溶液喷雾速率(5 ml / min),喷嘴到基材的距离(30 cm),气压(1.2kg / m〜2)等,以获得高质量的样品。通过EDS和XRD分析技术确定这些沉积膜的化学组成和结构。膜是非化学计量的。膜中铜和铟的含量与x和1-x值成比例变化。薄膜中的硒含量(低In浓度)低于预期的硒含量(50%),而更高的硒含量则超过50%。通过X射线衍射技术揭示的这些膜的晶体结构表明,沉积物是CuSe_2,CuInSe_2和In_2Se_3相的复合物。观测数据与JCPD数据完全匹配。在300 nm至1300 nm波长范围内进行的光学研究表明,吸收系数约为10〜4-10〜5 cm〜(-1),跃迁为直接型。当x从0变到1时,能带隙从2.10 eV连续降低到1.15 eV。表面形态显示出针状网状,长而细,一端呈锥形,随机取向的微晶。还观察到一些小球如过度生长。电导率研究表明,该薄膜本质上是半导体,并且发现随着In含量的增加,电导率会增加,直至x = 0.4,然后降低。对于x = 0.4的薄膜,观察到最高的电导率为1.1×10 4(Ω·cm)。然后确定这些样品的电导活化能。热功率测量显示出与电导率相似的相同变化趋势,并且样品显示出n型和p型导电性。

著录项

  • 来源
    《Solar Energy》 |2012年第6期|p.1910-1919|共10页
  • 作者单位

    Thin Film and Solar Studies Research Laboratory, Department of Physics, Solapur University, Solapur 413 255, M.S., India;

    Department of Electronics, Azad Mahavidyalaya, Ausa, Dist. Latur 413 520, M.S., India;

    Thin Film and Solar Studies Research Laboratory, Department of Physics, Solapur University, Solapur 413 255, M.S., India;

    Department of Electronics, Azad Mahavidyalaya, Ausa, Dist. Latur 413 520, M.S., India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Cu_(1-x)In_xSe_2 films; chemical spray technique; composition; structure; optical band gap; n and p-type conduction;

    机译:Cu_(1-x)In_xSe_2薄膜;化学喷涂技术组成;结构体;光学带隙n和p型传导;

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