A High-Performance n-i-p SiCN Homojunction for Low-Cost and High-Temperature Ultraviolet Detecting Applications

摘要

In this paper, ultraviolet (UV) detecting performances of the n-i-p SiCN homojunction prepared on a p-type (100) silicon substrate under room and elevated temperatures were studied. We analyze the morphology and structure of the crystalline SiCN film on Si first and then examine responses of the sensors to UV light by measurement of photo/dark current ratio with and without the irradiation of a 254-nm UV light. The current ratios of the homojunction under -5 bias, with and without irradiation of a 254-nm UV light are 3180 and 135.65, respectively, at room temperature and 200°C. The results are comparable or better to the reported UV detectors based on 4H-SiC or AlGaN in room or high temperature.