An accurate and stable humidity sensing characteristic of Si FET-type humidity sensor with MoS_2 as a sensing layer by pulse measurement

摘要

Highlights•MoS2as a sensing layer is formed on the FET type sensor.•The humidity sensing characteristics are measured by DC and pulsedI–Vmethod.•The effectiveness of a pulse scheme toIDdrift suppression has been demonstrated.•Humidity characteristics with respect to the operation region of MOSFETs are investigated.AbstractIn this work, we demonstrate the pulse scheme to obtain stable humidity sensing characteristics in Si FET-type humidity sensor using MoS2film as a sensing layer. To investigate the reaction between H2O molecules and MoS2film, the transfer characteristics (ID-VCG) and transient drain current behaviors (ID-t) are measured in bothpMOSFET andnMOSFET sensors by DC measurement. To verify the effect of the pulse scheme, the pulsedI–V(PIV) and theID-tare measured as a parameter of relative humidity. TheIDdrift of the FET-type sensor is effectively eliminated by applying the pulse to the control-gate (CG) of the FET-type humidity sensor.