CuO nanowire-based humidity sensors prepared on glass substrate

摘要

Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan, National Nano Devices Laboratories, Tainan 741, Taiwan; National Nano Devices Laboratories, Tainan 741, Taiwan; Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan, Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan; Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan; Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan; Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan; Department of Electrical Engineering, National University of Tainan, Tainan 700, Taiwan; National Nano Devices Laboratories, Tainan 741, Taiwan;%The authors report the growth of CuO nanowires (NWs) on glass substrate and the fabrication of CuO NW humidity sensors. It was found that average length of the CuO NWs increased from 0.4 μm to 2.8 and 6 u-m, respectively, as we increased the initial copper film thickness from 0.5 μm to 1 and 2 μm after oxidation. It was also found that resistance of the CuO NWs increased as we increased the relative humidity due to the p-type nature of CuO. Furthermore, it was found that samples with a larger initial copper film thickness and thus a longer average CuO NW length could provide a larger sensor response.