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Novel NASICON-based H_2 sensor with insensitive reference electrode and buried Au sensing electrode

机译:基于NASICON的新型H_2传感器,具有不敏感的参考电极和埋入的Au感测电极

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摘要

A mixed potential type sensor based on NASICON (sodium super-ionic conductor) was designed for the detection of hydrogen. Two original ways were combined to promote the sensor's sensitivity. LaCrO_3 was applied on Au reference electrode as H_2 oxidation layer to minimize the H_2 response on reference electrode. Additional NASICON layer was coated on Au sensing electrode serving as sensitive electrode for limiting the O_2 diffusion. H_2 temperature-programmed reduction (TPR) measurement was conducted to test the oxidizability of LaCrO_3. The effect of O_2 concentration on sensor's sensitivity was discussed to verify the function of additional NASICON layer. The correlation between the thickness of additional NASICON diffusion layer and sensor's sensitivity was also studied. The research showed that the sensor attached with 0.3 mm thick additional NASICON layer exhibited the largest sensitivity to 100-5000 ppm H_2 at 400 C, the slope was -123 mV/decade. In addition, the sensor exhibited excellent selectivity to H_2 against the other interference gases, such as CO, NO_2, NH_3, C_7H_8, C_2H_4, CH_2O, C_3H_6O and CH_4.
机译:设计了一种基于NASICON(钠超离子导体)的混合电位型传感器来检测氢。结合了两种原始方法来提高传感器的灵敏度。 LaCrO_3作为H_2氧化层施加在Au参比电极上,以最小化参比电极上的H_2响应。在用作敏感电极的Au感应电极上涂覆了额外的NASICON层,以限制O_2的扩散。进行了H_2程序升温还原(TPR)测量以测试LaCrO_3的氧化性。讨论了O_2浓度对传感器灵敏度的影响,以验证其他NASICON层的功能。还研究了附加NASICON扩散层的厚度与传感器灵敏度之间的相关性。研究表明,附有0.3毫米厚的附加NASICON层的传感器在400°C下对100-5000 ppm H_2表现出最大的灵敏度,斜率为-123 mV /十倍。此外,该传感器对H_2对其他干扰气体(例如CO,NO_2,NH_3,C_7H_8,C_2H_4,CH_2O,C_3H_6O和CH_4)具有出色的选择性。

著录项

  • 来源
    《Sensors and Actuators》 |2013年第8期|77-83|共7页
  • 作者单位

    State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China;

    State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China;

    State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China;

    State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China;

    State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China;

    State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    H_2 sensor; NASICON; LaCrO_3; Mixed potential;

    机译:H_2传感器;NASICON;LaCrO_3;混合潜力;

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