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首页> 外文期刊>Sensors and Actuators >Thermal-oxidative growth of aligned W_(18)O_(49) nanowire arrays for high performance gas sensor
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Thermal-oxidative growth of aligned W_(18)O_(49) nanowire arrays for high performance gas sensor

机译:对齐的W_(18)O_(49)纳米线阵列的热氧化生长,用于高性能气体传感器

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摘要

Gas sensors based on aligned arrays of W_(18)O_(49) nanowires were formed directly via a novel route of in situ thermal oxidation of sputtered W film on the substrate attached patterned Pt electrodes. The well-developed nanowires have diameter of 10-20 nm and show roughly aligned morphology. It is found that the duration of oxygen exposure during thermal annealing plays a crucial role to harvest a pure phase of W_(18)C_(49) nanowire with desired length. The roughly aligned W_(18)O_(49) nanowires show favourable microstructure for gas adsorption and rapid gas diffusion. The NO_2 -sensing properties of aligned W_(18)O_(49) nanowires sensor were evaluated at 50℃ up to 200℃ over NO_2 concentration ranging from 250 ppb to 2.5 ppm. The results indicate that the W_(18)O_(49) nanowire arrays sensor exhibits good NO_2-sensing performances at its optimal operating temperature of 150 ℃, especially perfect stability and fast response-recovery characteristics. The reliable interface performance and fast gas adsorption-desorption properties of the directly assembled vertically aligned nanowire array attribute to the superior stability and quick response/recovery. The growth mechanism of aligned W_(18)O_(49) nanowires is proposed based on the direct SEM observations on the intermediate products, and meanwhile the sensing mechanism of the corresponding sensor is analyzed.
机译:基于W_(18)O_(49)纳米线排列阵列的气体传感器是通过在附着有图案的Pt电极的基板上对溅射W膜进行原位热氧化的新途径直接形成的。发达的纳米线的直径为10-20 nm,并显示出大致对齐的形态。发现在热退火过程中暴露于氧气的持续时间对于收获具有所需长度的W_(18)C_(49)纳米线的纯相至关重要。大致对齐的W_(18)O_(49)纳米线显示出​​良好的微观结构,可用于气体吸附和气体快速扩散。在250 ppb至2.5 ppm的NO_2浓度下,在50℃至200℃的温度下评估了取向的W_(18)O_(49)纳米线传感器的NO_2传感特性。结果表明,W_(18)O_(49)纳米线阵列传感器在最佳工作温度为150℃时表现出良好的NO_2传感性能,尤其是具有良好的稳定性和快速的响应恢复特性。直接组装的垂直排列的纳米线阵列的可靠的界面性能和快速的气体吸附-解吸特性归因于优异的稳定性和快速的响应/恢复。基于对中间产物的直接SEM观察,提出了取向的W_(18)O_(49)纳米线的生长机理,并分析了相应传感器的传感机理。

著录项

  • 来源
    《Sensors and Actuators》 |2016年第2期|487-495|共9页
  • 作者单位

    School of Electronics and Information Engineering, Tianjin University, Tianjin 300072, China;

    School of Electronics and Information Engineering, Tianjin University, Tianjin 300072, China;

    School of Electronics and Information Engineering, Tianjin University, Tianjin 300072, China;

    School of Electronics and Information Engineering, Tianjin University, Tianjin 300072, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Tungsten oxide; Gas sensor; Nanowire arrays; NO_2;

    机译:氧化钨气体传感器纳米线阵列;NO_2;

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