Tomographic study on high-fluence impact of nitrogen into silicon

摘要

At present nothing is known about the way the amorphized zone in high-fluence nitrogen irradiated silicon distributes in three dimensions. This is examined here for the first time by a modified tomographic approach which enables us to reconstruct the high-fluence implantation distribution and the growth of the amorphized zone in three dimensions. It turns out that the latter does not grow isotropically, but preferentially in the forward direction, its 3D shape being cylindrical at medium fluences, and resembling that of a truncated egg at the highest fluences studied.