A novel BaTiO_3/SiO_2-based voltage-programmable link applicable to on-chip programmable devices

摘要

A novel voltage-programmable link (VPL) with Al/BaTiO_3/SiO_2/TiW silicide/TiW structure has been developed for programmable device application. A programming cell to evaluate programming behaviour consists of an n-MOSFET and a VPL, which are connected in series. The programming process of the VPL was achieved through the switched n-MOSFET. The amorphous BaTiO_3 film, prepared by means of an RF sputtering method, determines the program properties of the VPL owing to its lower breakdown field and metallic components. Sufficient low on resistance less than 10 Ω and low programming voltage below 10 V can be realized by using BaTiO_3 (120 A)/SiO_2 (150 A) films as insulators while keeping sufficient off state reliability.