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首页> 外文期刊>Semiconductor science and technology >Electrical, optical and structural properties of Li-doped SnO_2 transparent conducting films deposited by the spray pyrolysis technique: a carrier-type conversion study
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Electrical, optical and structural properties of Li-doped SnO_2 transparent conducting films deposited by the spray pyrolysis technique: a carrier-type conversion study

机译:喷雾热解沉积锂掺杂SnO_2透明导电膜的电学,光学和结构性质:载流子型转换研究

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摘要

In this paper, we investigate the electrical, optical and structural properties of Li-doped SnO_2 transparent conducting films deposited on glass substrates by the spray pyrolysis technique. The SnO_2:Li thin films were deposited at a substrate temperature of 480℃ using an aqueous ethanol solution consisting of tin and lithium chloride with various doping levels from 0 to 25 wt% in solution. The effect of increasing Li concentration on the electrical, optical and structural properties of SnO_2 films has been studied. The results of x-ray diffraction have shown that the deposited films are polycrystalline without any second phases with preferential orientations along the (110) and (211) planes and an average grain size of 28.7 nm. Also, the Hall effect and resistivity measurements of the films show that for a specific acceptor dopant concentration of ~2 wt% or [Li]/[Sn] atomic ratio equal to 37 at% in solution, the majority of carriers convert from electrons to holes and for a Li concentration of ~15 wt% in solution, p-conductivity increases sharply. The optical absorption edge for undoped SnO_2 films lies at 4.11 eV, whereas for high acceptor doped films it shifts towards lower energies (longer wavelengths) in the range of 4.11 to 3.61 eV.
机译:在本文中,我们研究了通过喷雾热解技术沉积在玻璃基板上的掺锂的SnO_2透明导电膜的电学,光学和结构性能。使用由锡和氯化锂组成的乙醇水溶液(溶液中掺杂浓度为0至25 wt%)在480℃的衬底温度下沉积SnO_2:Li薄膜。研究了增加Li浓度对SnO_2薄膜的电学,光学和结构性能的影响。 X射线衍射的结果表明,沉积的膜是多晶的,没有任何第二相,这些第二相具有沿着(110)和(211)面的优先取向并且平均晶粒尺寸为28.7nm。此外,薄膜的霍尔效应和电阻率测量结果表明,对于溶液中特定的受体掺杂剂浓度约为2 wt%或[Li] / [Sn]原子比等于溶液中的37 at%,大多数载流子从电子转变为且当溶液中的Li浓度约为15 wt%时,p电导率急剧增加。未掺杂的SnO_2薄膜的光吸收边缘为4.11 eV,而对于高受体掺杂的薄膜,其吸收光向4.11至3.61 eV范围内的较低能量(更长的波长)移动。

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