Analysis and optimization of the annealing mechanisms in (In)GaAsN on GaAs

摘要

We demonstrate the use of an ultra short annealing time to minimize the overall blueshift of the photoluminescence peak emission in (In)GaAsN during rapid thermal annealing (RTA). For the first time, the redshift component has been identified as a contributor in compensating the blueshift component. In doing so, we optimize the annealing conditions in dilute nitride and also identify the dominant mechanisms via the different PL behaviour exhibited by layers of InGaAs, GaAsN and InGaAsN embedded in GaAs as the annealing temperature is varied from 650 to 850 degrees C for t = 20 s.