Features of generation-recombination processes in CdTe-based Schottky diodes

摘要

The Au-CdTe Schottky diodes with a high rectification factor (10~7-10~8 at | V| = 0.5 V), low reverse current (10~(-12)-10~(-9) A at V = -1 V) and an open-circuit voltage of 0.75-0.85 V are investigated. Depending on the semiconductor resistivity (10~2-10~4 Ω cm at 300 K) and treatment of the surface of a single crystal before the vacuum deposition of Au, the observed current-voltage (I-V) characteristics of diodes exhibit a wide variety of shapes. The obtained experimental data on the charge transport mechanism in Schottky diodes based on both n- and p-type CdTe are summarized taking into account the results reported earlier. The variety of the observed I-V characteristics is explained in the framework of the Sah-Noyce-Shockley theory for generation recombination in the space-charge region of a p-n junction adapted to a Schottky diode.