Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels

摘要

A microwave noise technique has been used for experimental investigation, at room temperature, of power dissipation in the voltage-biased two-dimensional electron gas channel located in the GaN layer of a lattice-matched Al_(0.82)In_(0.18)N/AlN/GaN heterostructure. No saturation of the relaxation time is found in the investigated electron temperature range up to ～2800 K: the hot-electron energy relaxation time decreases from ～6 ps at near equilibrium to 75 ± 20 fs at ～200 nW/electron. The electron drift velocity reaches ～1.8 × 10~7 cm s~(-1) at 65 kV cm~(-1) electric field. The hot-phonon effect on power dissipation is discussed.