机译:在透明基板上可控地形成高纵横比的高取向GaAs纳米线
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan, Republic of China;
rnGraduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan, Republic of China;
rnGraduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan, Republic of China;
rnGraduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan, Republic of China;
rnGraduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan, Republic of China Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan, Republic of China;
机译:纵横比可控的取向良好的GeO_2纳米线阵列的汽-液-固生长和窄带紫外光致发光
机译:纵横比可控的排列良好的GeO 2 sub>纳米线阵列的汽-液-固生长和窄带紫外光致发光
机译:在玻璃基板上用于光催化应用的尺寸可控的透明,良好排列的TiO2纳米管阵列
机译:在透明基板上可控地形成高纵横比的高取向GaAs纳米线
机译:气溶胶形成机理,冶金方面以及电弧焊操作产生的烟雾的工程控制。
机译:用于自然-SiOx / Si(111)底物的低温诱导孔形成用于自催化的GaAs纳米线的生长
机译:纳米线上的位置控制VLS在掩模图案化的GaAs基材上用于轴向盖或INAS异质结构(Physte Solidi A 8/2018)