...
首页> 外文期刊>Semiconductor science and technology >Finite element analysis of deflection and residual stress on machined ultra-thin silicon wafers
【24h】

Finite element analysis of deflection and residual stress on machined ultra-thin silicon wafers

机译:机加工超薄硅片的变形和残余应力的有限元分析

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

The demand for ultra-thin silicon wafers has escalated in recent years with the rapid development of miniaturized electronic devices. Residual stress generated in the thinning process has a great influence on the machining quality of ultra-thin wafers. This work has developed a 2D axisymmetric finite element (FE) model to predict the deflection and full-field residual stress of ground ultra-thin wafers. The FE model consists of two-layer structures, i.e. a damage layer induced by the thinning process and a bulk silicon crystal layer without defects. A series of uniform in-plane strains is applied to the damage layer to simulate machining-generated initial stress. A full-field residual stress distribution in a machined ultra-thin wafer is predicted with the developed FE model after the initial stress is released. Based on the FE model, effects of wafer geometrical dimensions and loaded initial strain (or stress) on the maximum compressive/tensile residual stress and the maximum wafer deflection are revealed. The model is finally verified by comparing the simulated wafer deflection with the measured value. Based on this work, the deflection and residual stress of a machined ultra-thin wafer can be conveniently predicted.
机译:近年来,随着小型电子设备的飞速发展,对超薄硅晶片的需求不断增长。薄化过程中产生的残余应力对超薄晶片的加工质量有很大影响。这项工作开发了一个二维轴对称有限元(FE)模型,以预测地面超薄晶片的变形和全场残余应力。 FE模型由两层结构组成,即由减薄过程引起的损伤层和没有缺陷的块状硅晶体层。将一系列均匀的平面内应变应用于损坏层,以模拟机加工产生的初始应力。释放初始应力后,利用已开发的有限元模型预测加工后的超薄晶片中的全场残余应力分布。基于有限元模型,揭示了晶片几何尺寸和加载的初始应变(或应力)对最大压缩/拉伸残余应力和最大晶片挠度的影响。最后,通过将模拟晶圆的挠度与测量值进行比较来验证该模型。基于这项工作,可以方便地预测加工后的超薄晶片的挠度和残余应力。

著录项

  • 来源
    《Semiconductor science and technology》 |2011年第10期|p.3.1-3.7|共7页
  • 作者单位

    Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075, Singapore;

    Department of Intelligent Systems Engineering, Ibaraki University, 4-12-1 Nakanarusawa, Hitachi 316-8511, Japan;

    School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore;

    Department of Intelligent Systems Engineering, Ibaraki University, 4-12-1 Nakanarusawa, Hitachi 316-8511, Japan;

    Department of Intelligent Systems Engineering, Ibaraki University, 4-12-1 Nakanarusawa, Hitachi 316-8511, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号