首页> 外文期刊>Semiconductor science and technology >Zno/cds/cdse Core/double Shell Nanorod Arrays Derived By A Successive Ionic Layer Adsorption And Reaction Process For Quantum Dot-sensitized Solar Cells
【24h】

Zno/cds/cdse Core/double Shell Nanorod Arrays Derived By A Successive Ionic Layer Adsorption And Reaction Process For Quantum Dot-sensitized Solar Cells

机译:Zno / cds / cdse核/双壳纳米棒阵列通过量子点敏化太阳能电池的连续离子层吸附和反应过程得到。

获取原文
获取原文并翻译 | 示例
       

摘要

Well-aligned one-dimensional ZnO nanorod arrays were grown on transparent conducting glass, and CdS and CdSe quantum dot thin films were then deposited on the nanorod arrays in turn by an effective successive ionic layer adsorption and reaction process to form a ZnO/CdS/CdSe core/double-shell structure electrode. As revealed by the images of filed-emission scanning electron microscopy and transmission electron microscopy, the CdS and CdSe quantum dot thin films were uniformly deposited on the ZnO nanorods and the thickness of the CdS and CdSe shell can be controlled by varying the number of the adsorption and reaction cycles. For a typical sample that was prepared by a 10 times adsorption and reaction cycle, the thickness of the CdS and CdSe shell was about 4.0 and 5.5 nm, respectively. A short circuit density of 12.1 mA cm-(-2) and a power conversion efficiency of 1.72% were obtained for the solar cell based on the optimal ZnO/CdS/CdSe core-shell nanorod array electrode under the illumination of one sun (AM1.5, 100 mW cm-(-2)).
机译:在透明导电玻璃上生长排列良好的一维ZnO纳米棒阵列,然后通过有效的连续离子层吸附和反应过程依次在纳米棒阵列上沉积CdS和CdSe量子点薄膜,以形成ZnO / CdS / CdSe核/双壳结构电极。从场扫描电子显微镜和透射电子显微镜的图像可以看出,CdS和CdSe量子点薄膜均匀地沉积在ZnO纳米棒上,并且可以通过改变CdS和CdSe壳的数量来控制CdS和CdSe壳的厚度。吸附和反应周期。对于通过10倍的吸附和反应循环制备的典型样品,CdS和CdSe壳的厚度分别约为4.0和5.5 nm。基于最佳的ZnO / CdS / CdSe核壳纳米棒阵列电极在一个太阳照射下(AM1)的太阳能电池的短路密度为12.1 mA cm-(-2),功率转换效率为1.72% .5,100 mW cm-(-2))。

著录项

  • 来源
    《Semiconductor science and technology》 |2011年第9期|p.192-198|共7页
  • 作者单位

    Electronic Materials Research Laboratory, School of Electronic and Information Engineering,Xi'an Jiaotong University, Xi'an 710049, Shaanxi, People's Republic of China;

    Electronic Materials Research Laboratory, School of Electronic and Information Engineering,Xi'an Jiaotong University, Xi'an 710049, Shaanxi, People's Republic of China;

    Electronic Materials Research Laboratory, School of Electronic and Information Engineering,Xi'an Jiaotong University, Xi'an 710049, Shaanxi, People's Republic of China;

    Electronic Materials Research Laboratory, School of Electronic and Information Engineering,Xi'an Jiaotong University, Xi'an 710049, Shaanxi, People's Republic of China;

    Electronic Materials Research Laboratory, School of Electronic and Information Engineering,Xi'an Jiaotong University, Xi'an 710049, Shaanxi, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 01:31:25

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号