Diffraction limited 3.15μm cascade diode lasers

摘要

Cascade GaSb-based type-Ⅰ quantum well diode lasers emitting near 3.15 μm were designed and fabricated. The efficient carrier recycling between stages was confirmed by twofold increase of the efficiency of two-stage cascade laser as compared to reference single-stage devices. Narrow ridge cascade lasers generated more than 40 mW of continuous-wave output power in diffraction limited beam at room temperature.