Solid-state memcapacitive device based on memristive switch

摘要

This article describes the implementation of a solid-state memcapacitor based on combination of a memristor and traditional metal-insulator-metal capacitor. A device with an area of 5 μm × 5 μm has been fabricated and tested. The structure has been simulated and analyzed using circuit equivalents with parameters obtained from measurements. The memristor is represented by a sinh ( • )-type model. The performance of the memcapacitor is discussed, and some methods to improve it are proposed.