机译:碳化硅衬底上的氧化锌薄膜(ZnO / SiC):电光学性质和电活性缺陷
Departamento de Fisica, Universidade Federal de Vicosa, Av. P. H. Rolfs, s/n - Campus Universitario - Vicosa - MG, 36570-900, Brazil;
School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience, University of Nottingham, Nottingham NG7 2RD, UK;
Departamento de Fisica, Universidade Federal de Vicosa, Av. P. H. Rolfs, s/n - Campus Universitario - Vicosa - MG, 36570-900, Brazil;
Departamento de Quimica Fundamental, Universidade Federal de Pernambuco, Cidade Universitaria, 50670-901 Recife, PE, Brazil;
Departamento de Fisica, Universidade Federal de Juiz de Fora, Juiz de Fora, MG, 36036-330, Brazil;
Departamento de Fisica, Universidade Federal de Pernambuco, Cidade Universitaria, 50670-901 Recife, PE, Brazil;
School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience, University of Nottingham, Nottingham NG7 2RD, UK;
semiconductor; heterojunction; silicon carbide; zinc oxide; rectifiers; DLTS;
机译:ZnO缓冲层厚度对沉积在PET衬底上的铟锌氧化物薄膜的电和光学性能的影响
机译:用于微电子应用的高质量纳米晶碳化硅(nc-SiC)薄膜的改进的电传输性能
机译:双活性层氧化硅锌/氧化锌薄膜晶体管的电性能和偏置应力稳定性的改善
机译:溶胶凝胶法制备氧化锌薄膜上硅衬底的形貌和电学性能
机译:硅衬底上氧化锌薄膜的外延生长和性能。
机译:前体的研磨时间对喷涂铝掺杂氧化锌(ZnO:Al)薄膜物理性能的影响
机译:基材温度对磁控溅射层逐层掺杂锌氧化物薄膜结构,光学和电性能的影响