Shot noise suppression from independently tunnelled electrons in heterostructures

摘要

We investigate shot-noise suppression for independently transmitted electrons through single and multiple tunnelling barriers in the presence of inelastic scattering. Theoretical results are provided by Monte Carlo simulations of single- and multibarrier non-resonant GaAs/AlGaAs heterostructures at 77 K. At increasing applied voltages shot noise is suppressed up to a value of 0.6 for the single-barrier structure and systematically below this value for the case of multibarrier structures.