机译:基于狭窄的磁场溅射沉积的Ni /β-Ga_2O_3肖特基势差二极管的模拟与分析
Univ Biskra Lab Semiconducting & Metall Mat LMSM Biskra 07000 Algeria;
Univ Biskra Lab Semiconducting & Metall Mat LMSM Biskra 07000 Algeria;
Univ Biskra Lab Semiconducting & Metall Mat LMSM Biskra 07000 Algeria;
Univ Biskra Lab Semiconducting & Metall Mat LMSM Biskra 07000 Algeria;
Powercubesemi Inc Res & Dev Seongnam Si 13449 Gyeonggi Do South Korea;
Georgia Inst Technol George W Woodruff Sch Mech Engn Inst Elect & Nanotechnol Atlanta GA 30332 USA;
Sejong Univ Dept Intelligent Mechatron Engn Seoul 05006 South Korea|Sejong Univ Convergence Engn Intelligent Drone Seoul 05006 South Korea;
Ni/beta-Ga2O3 SBD; temperature; inhomogeneity barrier height; traps; interface layer;