Impact of heavy ion particle strike induced single event transients on conventional and π-Gate AlGaN/GaN HEMTs

摘要

This paper presents an extensive Victory TCAD based assessment to evaluate the device performance under heavy ion particle strike induced single event effects (SEEs). The impact of SEEs on pi-shaped AlGaN/GaN HEMT architecture has been compared with conventional AlGaN/GaN HEMT. For validation of simulation, models have been calibrated against the experimental data of in-house fabricated GaN HEMTs on SiC wafers, after which pi-shaped architecture is realized using Silvaco's Victory Process simulation tools. Comparisons demonstrate that pi-Gate HEMT architecture is a SEE hardened device under different heavy ion particle strike conditions. Further, due to the step modification in the electric field itself, the pi-Gate HEMT also exhibits SEE hardened operation under different ambient temperatures. The effect of angled heavy ion particle strike has also been studied for evaluating the device performance with regards to SEE.