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Surface charge accumulation and electrochemical protonation of transition metal oxides using water-infiltrated nanoporous glass

机译:渗水纳米多孔玻璃的表面电荷积累和过渡金属氧化物的电化学质子化

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Water, composed of two strong electro-chemically active agents of proton (H+) and hydroxyl ion (OH?), is expected to be a strong reductant as well as oxidant for transition metal oxides (TMOs). We have investigated the applicability of water for the optical, electronic, and magnetic property modification of TMOs using three-terminal thin-film transistor (TFT) structure with water-infiltrated nanoporous glass of amorphous 12CaO7Al(2)O(3) as the gate insulator. In this paper, we review the electronic property modulation of TMOs using our developed TFT structure with water-infiltrated nanoporous glass and discuss the different operation mechanism using the examples of SrTiO3 single crystal and VO2 epitaxial film as the TMO channels. Electronic properties of the TMOs can be modulated in two ways depending on the magnitude relationship between the energy level of conduction band minimum (E-CBM) of TMOs and hydrogen generation potential (E-H2). When E-CBM is higher than E-H2 in the case of SrTiO3, two-dimensional electron gas layer is formed at the TMO surface by the electrostatic charge accumulation and subsequent redox reaction. When E-CBM is lower than E-H2 in the case of VO2, protonation driven metal?insulator conversion of TMOs occurs by the penetration of H+ into the bulk region. The former approach may accelerate the development of nanostructures of high performance thermoelectric materials and the latter is applicable for the development of electrochromic device with non-volatile operation.
机译:由质子(H +)和氢氧离子(OH)的两种强电化学活性剂组成的水,有望成为过渡金属氧化物(TMO)的强还原剂和氧化剂。我们已经研究了水对TMO的光学,电子和磁性性质修饰的适用性,该技术使用无水12CaO7Al(2)O(3)渗水纳米多孔玻璃作为门的三端薄膜晶体管(TFT)结构绝缘子。在本文中,我们回顾了使用我们开发的带有渗透水的纳米多孔玻璃的TFT结构对TMO的电子特性的调制,并以SrTiO3单晶和VO2外延膜为TMO通道的实例讨论了不同的操作机理。取决于TMO的导带最小值(E-CBM)的能级与氢产生电势(E-H2)之间的大小关系,可以通过两种方式来调节TMO的电子特性。在SrTiO3的情况下,当E-CBM高于E-H2时,由于静电电荷的积累和随后的氧化还原反应,在TMO表面形成了二维电子气层。如果在VO2的情况下E-CBM低于E-H2,则TMO的质子化驱动的金属-绝缘体转化是通过H +渗透进入主体区域而发生的。前一种方法可以加速高性能热电材料的纳米结构的开发,而后一种方法可用于开发具有非易失性操作的电致变色器件。

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