Modification of the Properties of Cu_xS Thin Films by Low Energy Ion Beam Implantation

摘要

Cu_x.S thin films are implanted by low energy N+ ion beam. The influences of the energy and dose of N+ ion implantation on Cuu_xS films are investigated. The results show that the ratio of copper to sulfur is increased to some extent, the constituents of the film are turned to rich copper phase from rich sulfurous phase after ion beam irradiation. X -- ray diffraction spectrum and optical transmission spectra of sample have confirmed the results.