Samsung Simplifies Gigabit DRAM Design

摘要

Researchers from Samsung (Kyungki-Do, Korea) developed a new DRAM cell technology that merges storage node and memory cell contact processes to provide a simple, manufacturable process for 4 Gb DRAMs. The new cell scheme combines photolithography steps for the storage node and storage node contact, removing the shrinking alignment tolerance between the memory cell contact and storage poly.