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British University Announces First Submicron Magnetic Logic Device

机译:大英大学宣布推出首款亚微米磁逻辑器件

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Physicists at the University of Durham (Durham, UK) have fabricated a magnetic NOT gate that can operate at room temperature. It is the first wholly magnetic logic device to be formed on a microchip, and offers a key to what could become a completely new micro- and nano-magnetic chip technology. The Durham NOT gate consists of a track of a naturally ferromagnetic alloy shaped like an inverted "Y." The magnetism of this ferromagnetic alloy tends to run parallel to its track length and points in one of two opposite directions. A single ferromagnetic track can contain different regions, each magnetized in one of these two directions. Where these opposite magnetizations meet, a transition region or "domain wall" is formed in which the magnetization direction is gradually rotated across the thickness of the domain wall. Domain walls can be moved along magnetic tracks by applying an external magnetic field. These two different magnetization directions can be used to code for binary logic states of 0 and 1 for storing a binary digit.
机译:达勒姆大学(英国达勒姆)的物理学家已经制造出可以在室温下工作的磁性非门。它是第一个在微芯片上形成的全磁逻辑器件,并为可能成为一种全新的微磁和纳米磁芯片技术提供了关键。达勒姆NOT门由形状像倒“ Y”形的自然铁磁合金组成的磁道组成。这种铁磁合金的磁性趋向于平行于其轨道长度,并指向两个相反方向之一。单个铁磁轨道可以包含不同的区域,每个区域都在这两个方向之一上磁化。在这些相反的磁化相遇的地方,形成过渡区域或“畴壁”,其中,磁化方向在畴壁的厚度上逐渐旋转。通过施加外部磁场,畴壁可以沿着磁迹移动。这两个不同的磁化方向可用于编码0和1的二进制逻辑状态,以存储二进制数字。

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