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Enabling 3-D Design

机译:启用3D设计

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摘要

Pilot-level fabrication of wafers integrated Vinto 3-D structures have been processed. These demonstrate the repeatability and reliability of the Au/Sn penetration/post-joining process and a fine-pitch TSV process suitable for thin wafer handling. Reliability testing shows that this 3-D architecture exceeds Customer requirements. An IC design with stacked memory demonstrated a 1000-fold increase in speed with a 100-fold decrease in power consumption. This shows the groundbreaking capability of using 3-D processing to combine the design capabilities of a fabless company with the processing capabilities of both front-end and packaging foundries to create a high-performance device without resorting to leading-edge transistor geometries.
机译:集成了Vinto 3-D结构的晶圆的中试制造已经完成。这些证明了适用于薄晶圆处理的Au / Sn渗透/后接合工艺和细间距TSV工艺的可重复性和可靠性。可靠性测试表明,这种3-D体系结构超出了客户的要求。具有堆叠存储器的IC设计证明速度提高了1000倍,功耗降低了100倍。这表明了使用3-D处理将无晶圆厂公司的设计能力与前端和封装铸造厂的处理能力相结合的突破性能力,从而可以在不依靠领先的晶体管几何尺寸的情况下创建高性能器件。

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