Lanthanum Doping May Boost Silicon Fets

摘要

Strained silicon has picked up the slack left from a slowdown of pure device scaling over the past decade, but the gains from strain may be reaching a saturation point, according to Dimitri Antoniadis, a professor at the Massachusetts Institute of Technology (MIT, Cambridge, Mass.). The small footprint of scaled-down devices is leaving less room for stressor materials, and it is becoming more difficult to transfer stress into the channel, he said.