FORMATION OF ATOMICALLY FLAT SILVER FILMS ON GAAS WITH A SILVER MEAN QUASI PERIODICITY

摘要

A flat epitaxial silver film on a gallium arsenide [GaAs(110)] surface was synthesized in a two-step process. Deposition of a critical thickness of silver at low temperature led to the formation of a dense nanocluster film. Upon annealing, all atoms rearranged themselves into an atomically flat film. This silver film has a close-packed (111) structure modulated by a ''silver mean'' quasi-periodic sequence. The ability to grow such epitaxial overlayers of metals on semiconductors enables the testing of theoretical models and provides a connection between metal and semiconductor technologies.