首页> 外文期刊>Acta Ciencia Indica. Physics >SYNTHESIS, STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF Gd_2(Ba_(0.5)W_(0.5))_2O_7 CERAMICS
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SYNTHESIS, STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF Gd_2(Ba_(0.5)W_(0.5))_2O_7 CERAMICS

机译:Gd_2(Ba_(0.5)W_(0.5))_ 2O_7陶瓷的合成,结构及电学性质

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摘要

The polycrystalline sample of pyrochlore-type Gd_2 (Ba_(0.5)W_(0.5))_2O_7 (GBM) compound was synthesized by solid-state reaction technique. Preliminary, room temperature X-ray studies suggest the formation of single phase desired compound with cell parameters a = 11.691 (2) A, b= 7.023 (5) A and c = 13.864 (2) A in the orthorhombic crystal structure. SEM study with different magnifications provides information on quality of the sample and the uniform grain distribution over the entire surface of the sample. Detailed studies of the dielectric constant (t) and loss tangent (tan δ) of GBW as a function of frequency (0.1 kHz to 100 kHz) at mom temperature (23℃) and as a function of temperature (RT to 350℃) at different frequencies suggest that the compound do not have any dielectric anomaly in the studied frequency and temperature range. A c conductivity has been studied over a wide range of temperature. Variation of dc resistivity with electric field (0.5—50V/cm) at different temperatures and variation of dc resistivity with temperature (RT—370℃) at constant electric field of 60 V/cm showed the low-activation energy semiconductor characteristics of the material.
机译:通过固相反应技术合成了烧绿石型Gd_2(Ba_(0.5)W_(0.5))_ 2O_7(GBM)化合物的多晶样品。初步的室温X射线研究表明,正交晶系晶体结构中形成的单相所需化合物的单元参数为a = 11.691(2)A,b = 7.023(5)A和c = 13.864(2)A。用不同放大倍数进行的SEM研究提供了有关样品质量以及样品整个表面上均匀晶粒分布的信息。 GBW的介电常数(t)和损耗角正切(tanδ)在妈妈温度(23℃)下随频率(0.1 kHz至100 kHz)和温度(RT至350℃)在函数上的关系的详细研究不同的频率表明该化合物在研究的频率和温度范围内没有任何介电异常。已经在很宽的温度范围内研究了c电导率。在不同温度下,直流电阻率随电场(0.5—50V / cm)的变化以及在恒定电压60 V / cm时直流电阻率随温度(RT—370℃)的变化显示出该材料的低活化能半导体特性。

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