DEVELOPMENT OF SMALL-SIGNAL HIGH VOLTAGE GAIN AMPLIFIER USING COMPOUND UNIT OF BJT AND MOSFET

摘要

Modification in Darlington pair amplifier is proposed by replacing bottom BJT of the pair with a MOS transistor.The proposed amplifier circuit produces significantly high voltage gain. Poor response of conventional Darlington pair amplifiers at higher frequencies is found absent in the proposed amplifier circuit. Variations in voltage gain as a function of frequency and different biasing resistances are also perused. Proposed amplifier may be useful for amplification of small signals in mid frequency range and beneficial for various analog communication applications.