Effect of interface layers on electron field emission properties of amorphous diamond films

摘要

Hydrogen-free high sp~3 content amorphous diamond(AD)films are deposited on three different sub- strates-Au-coated Si(Au/Si), Ti-coated Si(Ti/Si)and Si wafers. Electron field emission properties and fluores- cent displays of the above AD films are studied by using a sample diode structure. The compositional profile of the inter- faces of AD/Ti/Si and AD/Si is examined by using secondary ions mass spectroscopy(SIMS). Because of the reaction and interdiffusion between Ti and C, the formation of a thin TiC intermediate layer is possible between AD film and Ti/ Si substrate.