A Monte Carlo study of the position of phase boundaries in backscattered electron images

摘要

A Monte Carlo simulation of the contrast varia- tion across phase boundaries in backscattered electron im- ages of multiple phase composition systems has been used to develop a model for prediction of the position of the interface based solely on a knowledge of the signal intensity levels on either side of the interface. A wide range of average atomic numbers of the phases on either side of the boundary have bee investigated at incident beam energies of 5,10,15, and 25 kV and a least-squares minimisation procedure used to op- timise the parameters of a generalised model.