Components manufactured using a SiGe bipolar process exhibit lower noise, better linearity and lower current consumption than their pure, bipolar-only process coun-terparts. The requirements of portable telecommunications equipment are becoming more demanding in terms of integration levels and performance. Achieving high receiver sensitivity requires low noise from the front-end amplifiers and mixers. Low current consumption for improved battery life necessitates the use of high-speed processes to reduce bias currents in transistors.
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