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Advantages of SiGe for RF front-ends

机译:SiGe在射频前端的优势

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摘要

Components manufactured using a SiGe bipolar process exhibit lower noise, better linearity and lower current consumption than their pure, bipolar-only process coun-terparts. The requirements of portable telecommunications equipment are becoming more demanding in terms of integration levels and performance. Achieving high receiver sensitivity requires low noise from the front-end amplifiers and mixers. Low current consumption for improved battery life necessitates the use of high-speed processes to reduce bias currents in transistors.
机译:使用SiGe双极工艺制造的组件比纯双极工艺组件具有更低的噪声,更好的线性度和更低的电流消耗。就集成度和性能而言,便携式电信设备的要求越来越高。要实现高接收灵敏度,就需要来自前端放大器和混频器的低噪声。低电流消耗以延长电池寿命,因此必须使用高速工艺来减少晶体管中的偏置电流。

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