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首页> 外文期刊>Review of Scientific Instruments >Note: An ion source for alkali metal implantation beneath graphene and hexagonal boron nitride monolayers on transition metals
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Note: An ion source for alkali metal implantation beneath graphene and hexagonal boron nitride monolayers on transition metals

机译:注意:用于过渡金属上石墨烯和六方氮化硼单层下面的碱金属注入的离子源

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摘要

The construction of an alkali-metal ion source is presented. It allows the acceleration of rubidium ions to an energy that enables the penetration through monolayers of graphene and hexagonal boron nitride. Rb atoms are sublimated from an alkali-metal dispenser. The ionization is obtained by surface ionization and desorption from a hot high work function surface. The ion current is easily controlled by the temperature of ionizer. Scanning Tunneling Microscopy measurements confirm ion implantation.
机译:介绍了碱金属离子源的构造。它可以将id离子加速为能量,使该能量能够穿透石墨烯和六方氮化硼的单层。 Rb原子从碱金属分配器升华。通过表面离子化和从热的高功函数表面解吸获得离子化。离子电流易于通过离子发生器的温度控制。扫描隧道显微镜测量结果证实了离子注入。

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