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The Role Of Thermal Treatment On The Optical Properties Of Ge_(0.15)se_(0.85) System

机译:热处理对Ge_(0.15)se_(0.85)体系光学性质的影响

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The Ge_(0.15)Se_(0.85) alloy has been prepared in evacuated quartz tubes. Thin amorphous film of Ge_(0.15)Se_(0.85) system has been prepared by using thermal evaporation technique with 400 ± 5 nm thickness. Atomic absorption spectroscopy (AAS) was used to determine the concentration of the composite elements (Ge and Se). Amorphous structure was observed for prepared films by using X-ray diffraction (XRD). The optical properties of Ge_(0.15)Se_(0.85) system have been studied as a function of annealing temperatures (T_a = 300, 350, 400 and 450 K). The results showed that optical transitions are direct and indirect. The energy gap E_g increased with increasing annealing temperature, i.e the absorption edge shifts to lower wavelength. The refractive index, extinction coefficient and real and imaginary parts of dielectric constant for these films vary with heat treatment. Outcome of our study confirms that this system may be used for photovoltaic devices.
机译:在真空石英管中制备了Ge_(0.15)Se_(0.85)合金。采用热蒸发技术制备了厚度为400±5 nm的Ge_(0.15)Se_(0.85)非晶态薄膜。原子吸收光谱法(AAS)用于确定复合元素(Ge和Se)的浓度。通过使用X射线衍射(XRD)观察到制备的膜的非晶结构。已经研究了Ge_(0.15)Se_(0.85)系统的光学性质与退火温度的关系(T_a = 300、350、400和450 K)。结果表明,光学跃迁是直接和间接的。能隙E_g随着退火温度的升高而增加,即吸收边移至较低的波长。这些薄膜的折射率,消光系数以及介电常数的实部和虚部随热处理而变化。我们研究的结果证实了该系统可用于光伏设备。

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