Initiation and propagation of the solitary wave of point-like defect formation during intense laser generation of electron-hole pairs in semiconductors and dielectrics

摘要

Similarly to the combustion wave model, a model of the solitary wave of defect generation (WDG) is developed, which originates and propagates in semiconductors and dielectrics during intense laser generation of electron-hole pairs. The WDG characteristics are deter- mined analytically: the critical WDG initiation intensity; the shape, the propagation velocity, and the concentration of WDG-produced point- like defects. A quantitative interpretation of the experiments on Si surface damage produced by multiple picosecond pulses is performed using these results as the base.