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首页> 外文期刊>Proceedings of the IEE - Part B: Electronic and Communication Engineering >Stability conditions in tuned common-emitter transistor amplifiers
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Stability conditions in tuned common-emitter transistor amplifiers

机译:调谐共发射极晶体管放大器的稳定性条件

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Some of the important factors which determine the stability of common-emitter tuned amplifiers are discussed. It is shown that the minimum value of feedback capacitance required to produce instability depends on the number of stages in the amplifier and that it varies appreciably with the phase shift in the transistor. In any particular case two values are obtained corresponding to whether the circuit is under- or over-neutralized, and these values define the boundaries of the stability region. At frequencies very much lower than the ¿-cut-off frequency of the transistor, these two limits are equal in magnitude, but as the frequency is increased there is an increasing difference between them. In practice these two limits are made sufficiently large so that component and transistor variations do not greatly affect the stability of the amplifier. It is shown, however, that variations from the perfectly neutralized condition may still produce considerable distortion in the amplifier frequency-response if the actual feedback capacitance is greater than about 20% of the values required for oscillation.
机译:讨论了决定共射极调谐放大器稳定性的一些重要因素。结果表明,产生不稳定性所需的反馈电容的最小值取决于放大器中的级数,并且该最小值随晶体管中的相移而明显变化。在任何特定情况下,都将获得两个值,分别对应于电路是中和不足还是过零,这些值定义了稳定区域的边界。在远低于晶体管的截止频率的频率上,这两个极限的大小相等,但是随着频率的增加,它们之间的差异也越来越大。实际上,这两个限制要足够大,以使元件和晶体管的变化不会对放大器的稳定性产生太大影响。然而,已经表明,如果实际反馈电容大于振荡所需值的约20%,则完全中和条件的变化仍可能在放大器的频率响应中产生相当大的失真。

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