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In Case You Missed It

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"Electrochemical Failures as a Function of Flux Volume under Bottom Terminated Components" Authors: Mark McMeen Abstract: The activity of flux residue changes when trapped under a low-profile leadless or bottom-terminated component. There are three factors to consider: 1) Standoff gap: lower-standoff gaps block out-gassing channels. Low-standoff gaps change the nature of the flux residue by leaving behind flux activators, solvents, and functional additives that normally would be outgassed from the residue; 2) Narrow pitch: miniaturized components have a decreased distance between conductors of opposite polarity. There is a higher potential to bridge conductors with flux residue; 3) Cubic volume of flux: increased I/O in combination with thermal lugs creates a higher cubic volume of flux left under the bottom termination. High flux volumes can block outgassing channels and bridge conductors.
机译:“电化学故障作为底部封端的组件下的助焊体积的功能”作者:Mark Mcmeen摘要:在低型无引线或底部封端的组分下捕获时助焊剂残留的活动变化。 有三个因素需要考虑:1)支架间隙:低位间隙差距块出频道。 低位差距通过留下助焊剂活化剂,溶剂和功能性添加剂来改变助焊剂残留物的性质,通常会从残留物中排出; 2)窄间距:小型化组分在相反极性的导体之间具有降低的距离。 桥接导体具有较高的潜在助焊剂; 3)支柱的立方体积:与热凸耳的组合增加I / O在底部终端下形成较高的立方体积的磁通量。 高通量容积可以阻挡除通道和桥接导线。

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    《Printed Circuit Design》 |2021年第6期|48-48|共1页
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