机译:a-Ge x sub> Se 100-x sub>的电性能
Department of Physics, Arak University, 38156 Arak, Iran;
Department of Physics, Panjab University, 160 014 Chandigarh, India;
Department of Physics, Panjab University, 160 014 Chandigarh, India;
Chalcogenides; hopping conduction; defect states;
机译:Ag对a-Ge 20 sub> Se 80 sub>玻璃电性能的影响
机译:脉冲激光沉积法获得的非晶锗薄膜的Vis-NIR特性和a-Ge / p-Si异质结构的电学性质
机译:退火温度和金浓度对多层a-Ge / Au薄膜电性能的影响
机译:(Co {sub} xfe {sub}(100-x)){sub} 81b {sub} 19 / mgo /(co {sub} xfe {sub}(100-x)){sub} 81b {Sub} 19磁隧道结
机译:金/砷化镓电触头的冶金和电学性能
机译:基于梯度的电学断层扫描(gEPT):一种使用磁共振成像在体内绘制生物组织电学特性的稳健方法
机译:(Gese_2)_100-x(sb_2se_3)_x玻璃的结构,非线性和光敏性