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Modified current-fed full-bridge isolated power factor correction converter with low-voltage stress

机译:具有低压应力的改进型电流馈电全桥隔离功率因数校正转换器

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摘要

One drawback of the conventional current-fed full-bridge (CFFB) power factor correction (PFC) converters is extremely high-voltage spikes on metal oxide semiconductor field effect transistors (MOSFETs), which cause many problems such as high-voltage high-cost devices used, unreliability and burdensome magnetising components imposed. To overcome above shortcomings, a new isolated CFFB PFC converter featuring efficiency improvement, high input current quality and good common mode (CM) noise performance is proposed in this study. The voltage spikes are effectively eliminated by using a non-dissipative clamping structure resulting of no-loss consumption and low-voltage MOSFETs used. Additionally, to evaluate the conducted electromagnetic interference behaviour, the differential mode loop and CM loop models are also presented. Two testing hardware systems with 180-240 V input, 380 V/1 kW output of the conventional CFFB PFC and proposed PFC were built and inspected to compare their performances. The experimental results showed that the proposed topology completely eliminated the voltage spike on MOSFETs. The efficiency was largely improved by utilising of high-performance MOSFETs. In consequence, the experimental results reveal the preponderance of the proposed PFC converter to the previous researches on this topic.
机译:常规电流馈送全桥(CFFB)功率因数校正(PFC)转换器的一个缺点是金属氧化物半导体场效应晶体管(MOSFET)上的极高电压尖峰,这会引起许多问题,例如高压高成本所使用的设备不可靠,并施加了繁重的磁化组件。为了克服上述缺点,本研究提出了一种新型的隔离式CFFB PFC转换器,该转换器具有效率提高,高输入电流质量和良好的共模(CM)噪声性能的特点。通过使用无耗散钳位结构,有效地消除了电压尖峰,该无耗散钳位结构可实现无损耗功耗和所用的低压MOSFET。此外,为了评估传导的电磁干扰行为,还介绍了差模环路和CM环路模型。构建并检查了两个输入硬件为180-240 V,输出功率为380 V / 1 kW的常规CFFB PFC和拟议PFC的测试硬件系统,以比较它们的性能。实验结果表明,提出的拓扑结构完全消除了MOSFET上的电压尖峰。通过使用高性能MOSFET大大提高了效率。结果,实验结果揭示了所提出的PFC转换器比该主题先前的研究优越。

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