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Experimental Research on Very-Fast Transient Overvoltage in 1100-kV Gas-Insulated Switchgear

机译:1100 kV气体绝缘开关设备极快速瞬态过电压的实验研究

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Very-fast transient overvoltage (VFTO) generated during switching of the disconnector in gas-insulated switchgear (GIS) may threaten the safety operation of electrical equipment. As the rated voltage of GIS increases, the difference between the level of VFTO and its lightning impulse withstand voltage gradually decreases. Hence, VFTO becomes the main dielectric stress to switchgear optimization and insulation coordination for ultra-high voltage (UHV) systems. To obtain the characteristics of VFTO in UHV GIS, two full-scale 1100-kV GIS test circuits were established in China. Two types of capacitive sensors were developed to measure VFTO generated in two test circuits. The measurement systems based on both types of the sensors were calibrated by a special calibration device in laboratories and onsite. The measurable frequency range of the systems is 0.1 Hz $sim$ 100 MHz and their division ratios are stable. More than 2000 tests by switching the disconnector in GIS had been carried out in the test circuits, and VFTO waveforms were captured by the measurement systems. From the test results, the waveform properties, the striking number, the predominant frequency, and distribution of the trapped charge voltage for full-voltage waveforms, the typical characteristics and oscillation coefficient of single-strike waveform, the distribution of VFTO magnitude was analyzed. The mitigation of VFTO by a damping resistor in the disconnector was illustrated. The maximum magnitude of VFTO was 2.27 p.u., and it was mitigated to 1.33 p.u. by a damping resistor of 500 $Omega$. The achieved characteristics of VFTO in the UHV GIS have become the basis of VFTO simulation and insulation coordination for engineering design.
机译:气体绝缘开关设备(GIS)中的隔离开关切换过程中产生的非常快速的瞬态过电压(VFTO)可能会威胁到电气设备的安全运行。随着GIS额定电压的增加,VFTO的电平与其雷电冲击耐受电压之间的差异逐渐减小。因此,VFTO成为用于超高压(UHV)系统的开关设备优化和绝缘配合的主要介电应力。为了获得特高压GIS中VFTO的特性,在中国建立了两个完整的1100 kV GIS测试电路。开发了两种类型的电容传感器来测量在两个测试电路中产生的VFTO。基于两种类型传感器的测量系统均通过实验室和现场的专用校准设备进行校准。系统的可测量频率范围为0.1 Hz至100 MHz,其分频比稳定。在测试电路中已通过切换GIS中的隔离开关进行了2000多次测试,并且测量系统捕获了VFTO波形。从测试结果中,分析了全电压波形的波形特性,打击次数,优势频率和捕获电荷电压的分布,单打击波形的典型特性和振荡系数,VFTO幅度的分布。说明了通过隔离开关中的阻尼电阻来缓解VFTO。 VFTO的最大量为2.27p.u.,并且降低到1.33p.u。由500Ω的阻尼电阻组成。特高压GIS中VFTO的已实现特性已成为VFTO仿真和绝缘协调用于工程设计的基础。

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