Novel Closing Switches Based on Propagation of Fast Ionization Fronts in Semiconductors

摘要

Power kilovolt electric pulses with subnanosecond rise time can be formed by means of semiconductor switches based on the propagation of ionization fronts in Si structures. We describe a new generation of such devices—which are deep-level dynistors (DLDs). The triggering of the ionization front in the DLDs occurs due to the field-enhanced ionization of deep-level electron traps. The DLDs are able to form high-current pulses with subnanosecond rise time and low residual voltage just after switching. We describe two power generators based on the DLDs as examples. In addition, we discuss the possibility of picosecond switching based on tunneling-assisted impact-ionization fronts.