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首页> 外文期刊>IEEE Transactions on Plasma Science >Critical Current Operation of the Optimized Self-Magnetic-Pinch Radiographic Diode
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Critical Current Operation of the Optimized Self-Magnetic-Pinch Radiographic Diode

机译:优化的自磁夹射线照相二极管的临界电流操作

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摘要

The self-magnetic-pinch (SMP) diode is being developed as an intense X-ray source for pulsed power driven radiographic systems. This diode is a critical current limited device described using equations derived from analytic approximations to large aspect ratio (cathode diameter to anode–cathode gap) variant diodes. The radiographic and large-aspect ratio variant of the SMP diode, differ in aspect ratio by around an order of magnitude. Derivation of the critical current limit for the large aspect ratio variant SMP diode requires a number of assumptions; not all of which are valid for the radiographic SMP diode. The applicability of existing critical current approximations to the radiographic SMP diode is discussed. A new critical current description for an optimized radiographic SMP diode configuration is proposed. This new critical current approximation is shown to account well for the radiographic performance (impedance and spot size) of optimized radiographic SMP diodes without the need for an experimentally derived empirical scaling factor.
机译:自磁夹(SMP)二极管正被开发为用于脉冲功率驱动射线照相系统的强X射线源。该二极管是一种关键电流限制器件,使用从解析近似法得出的方程式来描述大的宽高比(阴极直径与阳极-阴极间隙)的变型二极管。 SMP二极管的射线照相和宽高比变化形式的宽高比相差一个数量级。对于大长宽比的SMP二极管,临界电流限值的推导需要多种假设;并非所有这些都对射线照相SMP二极管有效。讨论了现有的临界电流近似值对射线照相SMP二极管的适用性。提出了用于优化射线照相SMP二极管配置的新的临界电流描述。该新的临界电流近似值可以很好地说明优化的放射线SMP二极管的放射线性能(阻抗和光斑尺寸),而无需通过实验得出经验的比例因子。

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