机译:通过TSVD和TGSVD规范改造低压开关装置电流密度分布
Shenyang Univ Technol Sch Elect Engn Shenyang 110870 Peoples R China;
Hebei Univ Technol Sch Elect Engn State Key Lab Reliabil & Intelligence Elect Equip Tianjin 300132 Peoples R China;
Hebei Univ Technol Sch Elect Engn State Key Lab Reliabil & Intelligence Elect Equip Tianjin 300132 Peoples R China;
Hebei Univ Technol Sch Elect Engn State Key Lab Reliabil & Intelligence Elect Equip Tianjin 300132 Peoples R China;
Tiangong Univ Sch Mech Engn Tianjin 300387 Peoples R China|Tiangong Univ Tianjin Key Lab Adv Elect Engn & Energy Technol Tianjin 300387 Peoples R China;
Current density; Low voltage; Current distribution; Switches; Mathematical model; Faces; Image reconstruction; Arc inversion; finite-element method (FEM); low-voltage switching devices; truncated generalized singular value decomposition (TGSVD) regularization;
机译:倒装磁场中电弧重构电流分布的反问题解和正则化参数选择
机译:倒装磁场中电弧重构电流分布的反问题解和正则化参数选择
机译:反相磁场反应电流分布重建的逆问题解决方案和正则化参数选择
机译:开关电容器电路作为固态故障限流和中断设备(FCLID)的研究,其功率因数校正适用于低压配电网
机译:用于低压信号处理应用的高性能CMOS开关电流电路
机译:阈值开关设备中的自发电流收缩
机译:通风口尺寸和分布对低压开关装置电弧运动和中断影响的实验研究